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RQ1E050RP
Pch -30V -5A Power MOSFET
l Outline
Datasheet
V DSS
R DS(on) (Max.)
- 30V
31m W
TSMT8
(8)
(7)
(6)
(5)
l Features
I D
P D
- 5A
1.5W
l Inner circuit
(1)
(2)
(3)
(4)
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
4) Pb-free lead plating ; RoHS compliant
* 1 ESD PROTECTION DIODE
* 2 BODY DIODE
l Packaging specifications
Packaging
Taping
l Application
Reel size (mm)
180
DC/DC converters
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
8
3,000
TR
UD
l Absolute maximum ratings (T a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
1/11
Symbol
V DSS
I D *1
I D,pulse *2
V GSS
P D *3
P D *4
T j
T stg
Value
- 30
? 5
? 20
? 20
1.5
0.55
150
- 55 to + 150
Unit
V
A
A
V
W
W
°C
°C
2012.10 - Rev.B
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